Sputter gun operation
Sputtering is an effective technique to remove the oxidation layer and other contaminations from the sample surface. This method requires subsequent annealing of the sample to recrystallize the surface. Generally to obtain good ARPES quality surface, we need several cycles of sputtering and annealing.
Sputter gun position is 100° (with respect to measurement position = 0° and transfer position = 90°). Set suitable Argon pressure (~10-6 mbar) for sputtering.
Energy = 1 kV
Emission = 5 mA.
Unfortunately, at the moment we do not have a way to monitor the sample current.